Abstract | Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a ultrafast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ~5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses. |
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Authors | S. Suomalainen, M. Guina, T. Hakulinen, O. G. Okhotnikov, T. G. Euser, and S. Marcinkevicius |
Year of publication | 2006 |
Date published | 08/2006 |
Journal | Appl. Phys. Lett. |
Volume | 89 |
Number | 071112: 1-3 |
Keywords |